مقاله رایگان درباره کارشناسی ارشد، پایان نامه، Technology

نوامبر 30, 2018 0 By admin4

منفی است.
خلاصه اینکه خلاصه اینکه شکلهای (4-3) تا (4-33) موید این مطلب است که با افزایش دمای نمونه، میدان الکتریکی شروع رفتار غیر اهمی و همچنین شروع کلیدزنی، کاهش می یابد. بنابراین می توان نتیجه گرفت که برانگیزش گرمایی توام با اثر میدان الکتریکی قوی (جهش فونون-همراه حامل بار) عامل رسانش غیر اهمی و کلیدزنی است. از مقایسه مقادیر گاف نوری گزارش شده ی نمونه های مورد بررسی [70] و انرژی فعالسازی الکتریکی آنها که در کار حاضر و همچنین گزارشهای قبلی [69] آمده است، می توان رسانش الکتریکی جهشی حامل بار بین حالات جایگزیده را تصدیق نمود چرا که مقادیر انرژی فعالسازی چند مرتبه کوچکتر از مقادیر گاف انرژی هستند.
بطور کلی لازم به ذکر است که نمونه های مورد بررسی نیمرسانا بوده و کلیدزنی نمونه ها بین شاخه های مقاومت بالا و پایین در زمان کوتاهی رخ می دهد و قابلیت کاربرد این نمونه ها را در قطعات کلیدزنی نشان می دهد. می توان افزایش دما در فیلمان جریان را با توجه به گرمای ژول عامل تغییر ساختار داخلی و سرعت بخشی کلیدزنی دانست.
منابع و مراجع
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Abstract
In this work, V2O5 -TeO2-Sb glasses were prepared by rapid melt quenching method, and effect of high electric field on the dc conductivity of TeO2-V2O5-Sb amorphous bulk samples with different constructive molar percentages was investigated. Results show that the weak field conduction of these samples was ohmic, while at high electric fields, bulk samples show nonlinear behavior (non-ohmic conduction) and current-voltage characteristics shows increasing deviation from Ohm’s law with increasing current density. In the present samples, non-ohmic behavior was occurred at electrical fields about 104 (V/cm). In addition, based upon the joule heating effect in the current filament, the electrothermal model was considered and heat dissipation factor and the electrical activation energy were determined.
Keywords: High fields, Ohmic conduction, Electrothermal model, Heat dissipation factor, Electrical activation energy
MINISTRY OF SCIENCE, RESEARCH AND TECHNOLOGY
Malayer University
Faculty of Science- Department of Physics
THESIS SUBMITTED TO THE SCHOOL OF GRADUATE STUDIES IN PARTIAL FULFILMENT OF THE REQUIRE00MENTS FOR THE DEGREE OF MASTER OF SCIENCE ( M.Sc)
IN
SOLID STATE PHYSICS
Measurement of heat dissipation coefficient in switching phenomenon and determination of switching mechanism for Sb-V2O5-TeO2 glasses
Supervisor:
Dr. Dariush Souri
By:
Raziye Ghasemi
September 2014
1Bulk
2Thin film
4 . Glass transition temperation (Tg)
5Vacancy
6Disorder
7Long-rang order
8Short-rang order
9Localization
10Mobility gap
11Homogeneous disorder
12Inhomogeneous disorder
13Amorphous
14Vitreous
15Glassy
16Dangling bonds
17Hopping transport
18Topological disorder
19Spin disorder
20Dilute magnetic alloys
21Spin glass
22Substitutional disorder
23Vibrational